The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 25, 1994
Filed:
Jul. 02, 1992
Applicant:
Inventors:
Alain Escoffier, Grenoble, FR;
Roland Madar, Eybens, FR;
Andreas Magerl, Saint Ismier, FR;
Eric Mastromatteo, Saint Martin d'Heres, FR;
Assignees:
Institut Max Von Laue, Grenoble, FR;
Institut National Polytechnique de Grenoble, Grenoble, FR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
156612 ; 437131 ; 437132 ; 437100 ; 148D / ;
Abstract
A method for manufacturing a crystal comprising at least two elements wherein the proportion of at least one of the elements varies in the direction of the thickness. A CVD process is used. The proportion of the gas components from which is formed the deposition is varied with time. The invention applies to the manufacturing of Si.sub.x Ge.sub.1-x crystals.