The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 11, 1994
Filed:
Jun. 26, 1992
Shozo Yuge, Kawasaki, JP;
Hideaki Kinoshita, Yokohama, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
In a semiconductor light-emitting element having a double hetero junction structure of an InGaAP system an n-type dopant, which does not change a crystal structure, is doped in an In.sub.1-y (Ga.sub.1-x Al.sub.x).sub.y P(0.ltoreq.x<1, y.perspectiveto.0.5) active layer, so that an n-type active layer (4), is formed between a p-type InGaAlP cladding layer (5), which has band-gap energy that is larger than that of the active layer (4), and an n-type InGaAlP cladding layer (3), thereby preventing the dopant of the P-type InGaAlP cladding layer (3) from being dispersed into the active layer (4). Thus, the oscillation wavelength of the light-emitting element is not shifted to a short wavelength, and the threshold current of the oscillation is not increased thereby providing an element which can improve yield and reliance.