The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 11, 1994
Filed:
Nov. 06, 1991
Mitsuhiro Hamada, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
A semiconductor integrated circuit device includes a plurality of ECL gate groups. Each gate group includes a plurality of ECL gates each having a constant current source formed by a MOS transistor circuit. Each gate group also includes one gate voltage control circuit. When the gate voltage control circuit receives a signal indicating a selection state for the group, it applies a high potential bias voltage to the MOS transistor circuits of all the ECL gates within the gate group. On the other hand, when it receives a signal indicating a non-selection state, it applies a low potential bias voltage (GND potential) to them, thereby lowering the constant current to the minimum necessary amount. The circuit is capable of largely saving the current consumption by controlling the bias voltage for the MOS transistor circuits in two steps depending on the selection state or the non-selection state.