The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 11, 1994

Filed:

Dec. 19, 1991
Applicant:
Inventors:

Manjin J Kim, Ossining, NY (US);

Jein-Chen Young, San Jose, CA (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; G11C / ;
U.S. Cl.
CPC ...
257316 ; 257397 ; 257398 ; 257618 ; 257408 ; 365185 ; 437 35 ;
Abstract

A nonvolatile storage device is provided with at least one stacked poly gate structure formed on the substrate and disposed between a first trench and a second trench. The trenches each having two walls. A first doped area having a first conductivity type extending along the wall of the first trench and a second doped area having a second conductivity type extending along the wall of the second trench. The first doped area and the second doped area having heights greater than widths, the heights being parallel to the trench walls and the widths being perpendicular thereto. The trench walls are lined with a metal silicide to decrease resistivity.


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