The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 11, 1994
Filed:
Nov. 06, 1992
Gaylord E Moss, Marina del Rey, CA (US);
Kevin Yu, Temple City, CA (US);
John E Wreede, Monrovia, CA (US);
Hughes Aircraft Company, Los Angeles, CA (US);
Abstract
A method for precisely controlling the overall average diffraction efficiency of a hologram including the steps of (a) providing a hologram layer that includes a hologram formed pursuant to hologram forming exposure and development, (b) coating the hologram layer with a photoresist layer, (c) masking the photoresist layer with a mask having opaque and transparent areas wherein the proportion of the opaque areas relative to the transparent areas is selected pursuant to the desired diffraction efficiency, the opaque and transparent areas being sufficiently small so as to have little noticeable effect when the resulting hologram is played back, (d) exposing the photoresist layer to actinic illumination through the mask transparent areas, (e) developing the photoresist layer to remove the photoresist in the areas illuminated by the actinic illumination to uncover the areas of the recording material corresponding to the transparent areas of the mask, (f) etching the recording material to remove the areas thereof that were uncovered by etching of the photoresist, and (g) removing the remaining photoresist. The formation of the hologram can be at an effective exposure in the saturated region of the efficiency vs. exposure curve wherein changes in efficiency as a function of parameter variation are small.