The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 04, 1994

Filed:

Nov. 13, 1992
Applicant:
Inventors:

Teruo Yokoyama, Atsugi, JP;

Masahisa Suzuki, Tokyo, JP;

Tomonori Ishikawa, Fujisawa, JP;

Takeshi Igarashi, Atsugi, JP;

Assignee:

Fujitsu Limited, Kawasaki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257194 ; 257190 ; 257499 ;
Abstract

A semiconductor integrated circuit including therein a plurality of active devices comprises a semiconductor substrate, a first buffer layer on the substrate, a second buffer layer provided on the substrate and incorporating therein defects with a concentration level substantially larger than the concentration level of the defects in the first buffer layer; a device layer provided on the second buffer layer and being provided with the active devices, and a plurality of unconductive, device isolation regions formed between the active devices such that the device isolation region extends from an upper surface of the device layer toward the substrate at least beyond a lower surface of the device layer.


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