The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 04, 1994
Filed:
Jan. 13, 1993
Takahide Ishikawa, Itami, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
According to a method for producing semiconductor chips, first grooves are formed in a semiconductor wafer at a front surface, dividing the semiconductor water into a plurality of regions, each region including a single device or an integrated circuit; a first metallization layer is formed in the first grooves; the semiconductor wafer is thinned to a desired thickness from the rear surface of the wafer; second grooves are formed in the semiconductor wafer at the rear surface at positions opposite the first grooves, exposing the first metallization layer; a second metallization layer is formed in the second grooves; a metal layer for heat radiation is formed on the rear surface of the wafer but not on the second metallization layer; and the first and second metallization layers in the first grooves are cut with a dicing blade to produce a plurality of semiconductor chips. Burrs of the metallization layers caused by the dicing are small and never protrude beyond the rear surface of the chip, resulting in a reliable junction between the chip and a mounting substrate in a subsequent die-bonding process.