The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 04, 1994
Filed:
Mar. 03, 1993
Applicant:
Inventors:
Stephen J Fonash, State College, PA (US);
Gang Liu, Sunnyvale, CA (US);
Assignee:
The Penn State Research Foundation, University Park, PA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; B05D / ;
U.S. Cl.
CPC ...
427578 ; 427569 ; 4272481 ; 4272557 ; 437233 ; 437967 ; 437109 ;
Abstract
A fabrication process polycrystalline silicon thin film transistors commences with the deposition of an ultra-thin nucleating-site forming layer onto the surface of an insulating substrate (e.g., 7059 glass). Next, an amorphous silicon film is deposited thereover and the combined films are annealed at temperatures that do not exceed 600.degree. C. By patterning the deposition of the nucleating site forming material on the glass substrate, the subsequently deposited amorphous film can be selectively crystallized only in areas in contact with the nucleating-site forming material.