The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 28, 1993

Filed:

Sep. 30, 1991
Applicant:
Inventors:

Shigeki Ohbayashi, Hyogo, JP;

Atsushi Ohba, Hyogo, JP;

Toru Shiomi, Hyogo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C / ;
U.S. Cl.
CPC ...
365204 ; 307451 ; 36523003 ;
Abstract

A divided word line driving circuit applicable to a static random access memory (SRAM) employing a divided word line method is disclosed. When a divided word line is activated, the potential at the input of an inverter for driving the word line is brought to a low level. When the input signals S1 and S2 are both at a low level, the divided word line is brought to an inactive state. The input of the inverter is charged by a transistor 101 in addition to a transistor 102 which is always on. In other words, transistor 101 contributes to accelerating charging of the input of the inverter. Consequently, the potential of the divided word line is made to rise at high speed, so that access operation at high speed can be achieved. The circuit is implemented with a small number of transistors, so that it becomes also possible to enhance the degree of integration of a SRAM.


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