The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 28, 1993
Filed:
Dec. 13, 1991
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A semiconductor integrated circuit device having a high-efficiency transfer gate and which is applicable to a DRAM which has voltage-raised word lines configured from a data retention node, a data line that is precharged to a required level, a MOS transistor with the source and the drain each connected to a data line and a data retention node, a sense amplifier that amplifies the data that has been transferred to the data line via this MOS transistor a step-up circuit that applies a voltage that is higher than the drain voltage when compared with an absolute value, to the gate of the MOS transistor, and a step-down circuit for reducing the absolute value of a gate voltage of the MOS transistor at the timing of activation of the sense amplifier.