The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 28, 1993

Filed:

Apr. 09, 1992
Applicant:
Inventor:

Masaharu Hamasaki, Kanagawa, JP;

Assignee:

Sony Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H04N / ; H04N / ;
U.S. Cl.
CPC ...
35821311 ; 358212 ; 35821315 ;
Abstract

A solid state image sensing device is formed of a plurality of photo-sensing sections arranged in a two-dimensional fashion at a pixel unit in the horizontal and vertical directions. In this case, each of the plurality of photo-sensing sections is formed of a feedback gate transistor whose gate electrode and source electrode are both connected to a vertical signal line, a vertical selection transistor which is connected in series to the feedback gate transistor and whose gate electrode is connected to a horizontal selection line, and a photoelectric conversion element provided under a channel region of each of the feedback gate transistor and the vertical selection transistor, whereby the sensitivity of the solid state image sensing device is increased and the smear thereof can be lowered.


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