The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 28, 1993
Filed:
May. 15, 1991
James M DePuydt, St. Paul, MN (US);
Jun Qiu, Woodbury, MN (US);
Hwa Cheng, Woodbury, MN (US);
Michael A Haase, Woodbury, MN (US);
Minnesota Mining and Manufacturing Company, St. Paul, MN (US);
Abstract
A ZnSe semiconductor device includes a ZnSe pn junction having p-type and n-type layers, and an ohmic contact to both layers. The ohmic contact to the p-type layer includes a p-type ZnSe crystalline semiconductor contact layer, and a conductive electrode layer characterized by a Fermi energy. The contact layer is doped with nitrogen shallow acceptors, characterized by a shallow acceptor energy, to a net acceptor concentration of at least 5.times.10.sup.17 cm.sup.-3. The contact layer also includes sufficient deep energy states between the shallow acceptor energy and the electrode layer Fermi energy to enable cascade tunneling by charge carriers.