The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 28, 1993
Filed:
Jan. 28, 1991
Mark V Wadsworth, Richardson, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A FET structure for use in narrow bandgap semiconductors comprising a narrow bandgap semiconductor substrate 24, an implanted source region 12 of a conductivity type opposite that of the substrate 24, an implanted drain region 12 of the same conductivity type as source region 12 and spaced from source region 12, a first diode guard ring 14 insulatively disposed on the substrate 24 and surrounding source region 12, a second diode guard ring 14 insulatively disposed on the substrate 24 and surrounding drain region 12, a gate region 16 insulatively disposed on the substrate 24 and surrounding the source and drain regions 12 and the first and second diode guard rings 14, an outer periphery transistor guard ring 18 insulatively disposed on the substrate 24 and surrounding the gate region 16 and a field plate region 20 insulatively disposed on the substrate 24 and surrounding the outer periphery transistor guard ring 18. Other devices, systems and methods are also disclosed.