The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 28, 1993
Filed:
Aug. 19, 1991
Applicant:
Inventors:
Jean-Pierre Hirtz, l'Haye les Roses, FR;
Didier Pribat, Sevres, FR;
Assignee:
Thomson-CSF, Puteaux, FR;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 89 ; 437128 ; 148D / ;
Abstract
A power transistor comprises, on a layer of insulator, a layer of a semiconductor material comprising several zones with N+, N and N+ doping. The N doped zone corresponds to the gate zone. The N+ doped zones correspond to the drain and source zones. A method for the making of such a transistor is also disclosed. Application: the making of a field-effect transistor with improved heat dissipation.