The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 28, 1993
Filed:
Apr. 16, 1992
Applicant:
Inventors:
Masafumi Sano, Kawasaki, JP;
Katsuji Takasu, Asaka, JP;
Hisanori Tsuda, Atsugi, JP;
Yutaka Hirai, Tokyo, JP;
Assignee:
Canon Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 40 ; 437101 ; 437913 ; 148D / ; 148D / ; 148D / ;
Abstract
A method of producing a thin film field effect transistor. An insulating thin film layer is formed on a gate electrode subsequent to the gate electrode being formed on a substrate. A multilayer structure is formed on the insulating thin film layer subsequent to the insulating thin film layer being formed on the gate electrode by alternately laminating a number of non-monocrystalline semiconductor material layers and a number of non-monocrystalline material layers.