The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 28, 1993
Filed:
Jan. 16, 1992
Heinz Beneking, Aachen, DE;
Temic Telefunken microelectronic GmbH, Heilbronn, DE;
Abstract
The invention relates to a process for producing a junction field effect transistor in which the surface layer provided for conducting the current has a reduced cross-section in the channel area. The gist of the invention is that a photoresist mask is applied to the surface layer of the first conductivity type which is initially of uniform thickness. The surface layer is removed to a residual thickness through an opening in the photoresist mask. Impurities are then implanted into the surface layer through the same opening in the aforesaid mask to produce a zone of the second or opposite conductivity type. Finally, the aforementioned mask is used as a contacting mask for the manufacture of the gate electrode.