The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 28, 1993
Filed:
Nov. 17, 1992
Korea Institute of Science and Technology, Seoul, KR;
Abstract
A silicon fusion bonding method and apparatus for bonding silicon substrates in wet oxygen atmosphere. The method comprises a stabilizing step of the silicon substrates, which has been processed in a pre-process, in the wet oxygen atmosphere, a primarily bonding step of the silicon substrates to each other and a heat-treating step of the silicon substrates at a high temperature in the wet oxygen atmosphere in order to remove micro-gaps from a junction interface by virtue of filling-up effect of micro-gaps by interfacial oxide growing. The present apparatus includes a hollow quartz tub having a stabilization part and a heat-treating part, a flask for providing the wet oxygen atmosphere for the quartz tub, a heater for heating the heat-treating part of the quartz tub and a movable carrier for moving between the stabilization and heat-treating parts of the quartz tub as carrying thereon the silicon substrates in such a manner that the silicon substrates are spaced apart from each other with a quartz spacer interposed therebetween when they are stabilized and come into contact with each other by removing of the quartz spacer when they are heat-treated.