The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 21, 1993
Filed:
May. 12, 1992
Luke J Mawst, Torrance, CA (US);
Dan Botez, Redondo Beach, CA (US);
Charles A Zmudzinski, Redondo Beach, CA (US);
TRW Inc., Redondo Beach, CA (US);
Abstract
A high-power semiconductor laser diode that employs a lateral antiresonant reflecting optical waveguide for generating a single-mode laser beam having an aperture spot size on the order of 4 to 8 microns. The lateral antiresonant reflecting optical waveguide is a negative-index waveguide or antiguide that operates in an antiresonance condition for the fundamental lateral mode, but not for the higher-order lateral modes. Consequently, the fundamental lateral mode is reflected by the lateral waveguide while the higher-order lateral modes are allowed to leak out. This provides strong discrimination between the fundamental lateral mode and the higher-order lateral modes in order to generate a single-mode laser beam having a large aperture spot size. The lateral waveguide also provides good lateral mode stability due to the large negative step in the waveguide index of refraction.