The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 21, 1993
Filed:
Dec. 07, 1992
Applicant:
Inventors:
Assignee:
Motorola, Inc., Schaumburg, IL (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437228 ; 437195 ; 437235 ; 156653 ;
Abstract
A method for forming a planarized layer of material starts by providing a substrate (12). An integrated circuit layer (14) is formed overlying the substrate (12). A first layer of material (16) is formed overlying the integrated circuit layer (14). An etch stop layer (18) is formed overlying the layer of material (16) and etched to form sidewall formations or spacers. A second layer of material (20) is formed overlying the layer of material (16) and the etch stop layer (18). Planarization, polishing, or etch-back processing is performed using the etch stop layer (18) to endpoint. The resulting planarized layer has a thickness which is determined accurately by the etch stop layer (18).