The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 14, 1993
Filed:
Mar. 24, 1992
Yukio Ikeda, Kamakura, JP;
Gen Toyoshima, Kamakura, JP;
Kiyoharu Seino, Kamakura, JP;
Tadashi Takagi, Kamakura, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A small-sized, high-efficiency semiconductor amplifier exhibits a satisfactory efficiency characteristic over a wide band and a low output level for secondary and tertiary higher harmonics. The semiconductor amplifier is equipped with an output circuit which is composed of a parallel resonance circuit for the secondary higher harmonic of the fundamental-operation frequency, a first connection line, a second connection line, and an open-end line having a length corresponding to approximately 1/4 of the wavelength of the tertiary higher harmonic, the drain terminal of FETs leading to the output circuit being connected to one end of the parallel resonance circuit through the first connection line, an open point being formed at one end of the parallel resonance circuit, the other end of the parallel resonance circuit for the secondary higher harmonic being connected to the open-end line having a length corresponding to approximately 1/4 of the wavelength of the tertiary higher harmonic through the second connection line, the length and width of the first connection line being adjusted to determine the secondary-higher-harmonic load-reflection coefficient of the FETs as seen from the drain thereof to such a value as will maximize the efficiency of the amplifier, the length and width of the second connection line being appropriately adjusted so as to adjust the impedance matching conditions with respect to the fundamental wave.