The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 14, 1993
Filed:
Oct. 29, 1992
Amnon Yariv, San Marino, CA (US);
Charles F Neugebauer, Pasadena, CA (US);
Aharon J Agranat, Pasadena, CA (US);
California Institute of Technology, Pasadena, CA (US);
Abstract
An adjustable CCD gate structure utilizing ultra-violet light activated floating gates, wherein a floating polysilicon gate is used between a CCD electrode and the underlying substrate to provide a fixed voltage bias to the CCD gate during the manufacturing process thereof The floating gate is programmed with a desired voltage bias during the application of ultra-violet light and is thereafter fixed at that adjusted level, upon the removal of the ultra-violet light. Thus, the method of the present invention comprises the steps of providing a CCD gate structure in which there is such a floating polysilicon gate between the CCD electrode and the underlying substrate; applying an ultra-violet light activation to the floating polysilicon gate; applying a voltage to the conventional CCD electrode which is resistively coupled to the floating electrode for adjusting the bias on the floating electrode to a desired level; and then removing the ultra-violet light to fix the voltage bias at the floating polysilicon gate at a permanant level.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile