The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 14, 1993
Filed:
Jun. 17, 1992
Applicant:
Inventors:
Masaya Mannou, Osaka, JP;
Kiyoshi Onaka, Osaka, JP;
Assignee:
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437129 ; 437151 ;
Abstract
When an n-type semiconductor layer is formed on a p-type semiconductor layer in a device such as a semiconductor multi-layer film, the n-type semiconductor layer is formed by adding a p-type dopant as well as an n-type dopant simultaneously. In a double heterostructure semiconductor laser including an AlGaInP active layer and AlGaInP cladding layers, when an n-type current blocking layer is formed on the p-type cladding layer, the n-type current blocking layer is formed by adding a p-type dopant as well as an n-type dopant simultaneously.