The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 14, 1993

Filed:

Apr. 23, 1992
Applicant:
Inventors:

Jae H Sang, Seoul, KR;

Young J Kwon, Seoul, KR;

Jun K Bae, Suweon, KR;

Kun O Ahn, Suweon, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 52 ; 437 45 ; 437978 ;
Abstract

A method for manufacturing mask ROMs is disclosed, wherein a semiconductor substrate of a first conductive type, on which a gate insulating layer, a poly-silicon layer, source and drain regions and a spacer are formed is stored after depositing the entire surface of the structure with a protection layer until the next steps such as programming, so that the poly-silicon gate and the source and drain regions of the structure can be prevented from being polluted with organisms or matriums, etc. by forming a protection layer before the storage, thereby improving the efficiency and reliability of mask ROMs, and the ROM data region can be checked during the etching of the protecting layer for distinguishing the defective chips simply and efficiently in a short manufacturing time.


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