The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 07, 1993
Filed:
Jul. 13, 1992
Applicant:
Inventor:
Mark C Calcatera, Spring Valley, OH (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H03F / ;
U.S. Cl.
CPC ...
330-3 ; 313309 ; 313336 ; 330277 ;
Abstract
A field emitting drain field effect transistor FEDFET device which combines the desirable frequency response and current control characteristics of a field effect transistor (or other transistor) with the higher voltage higher power level characteristics of a field emission triode vacuum tube device to provide characteristics improved over those of either component element. The combination device is physically as well as electrically integrated in a semiconductor like structure. Equivalent circuit and frequency response characteristics are disclosed.
Calcatera, Mark. (1993). Field emitting drain field effect transistor (U.S. Patent No. 5268648). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5268648
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile