The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 07, 1993
Filed:
Sep. 28, 1992
Israel A Lesk, Phoenix, AZ (US);
Frank S d'Aragona, Scottsdale, AZ (US);
Francine Y Robb, Tempe, AZ (US);
Raymond C Wells, Scottsdale, AZ (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
A dielectric and conductive isolated island is fabricated by providing an active wafer having a first and a second major surface, a doped region extending from the first surface, and a trench formed at the first surface. A conductive layer is formed on the first surface and in the trench. A planarizable layer comprised of a dielectric layer is then formed on the conductive layer. A handle wafer is bonded to the planarizable layer. The active wafer and the handle wafer are heated so that the doped region diffuses along the conductive layer to form an equalized concentration of dopant along the conductive layer which diffuses into the active wafer to form the doped region adjacent all of the conductive layer. A portion of the second surface of the active wafer is then removed so that at least a portion of the dielectric layer of the planarizable layer is exposed.