The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 07, 1993
Filed:
Nov. 12, 1991
Udo Schwalke, Williston, VT (US);
Christoph Zeller, Fishkill, NY (US);
Heinrich J Zeininger, Essex Junction, VT (US);
Wilfried Hansch, Charlotte, VT (US);
Siemens Aktiengesellschaft, Berlin and Munich, DE;
Abstract
A method of making a MOS field effect transistor having shallow source and drain regions with improved breakdown and leakage characteristics includes the step of forming a layer of a metal silicide along a surface of a body of silicon at each side of a gate which is on an insulated from the surface. A high concentration of an impurity of a desired conductivity type is implanted only into the metal silicide layers. A lower concentration of the impurity is then implanted through the metal silicide layers and into the body just beneath the metal silicide layers. The body is then annealed at a temperature which drives the impurities from the metal silicide layer into the body to form the junctions.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile