The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 07, 1993
Filed:
Nov. 22, 1991
Hidemasa Mizutani, Sagamihara, JP;
Jun Nakayama, Atsugi, JP;
Masaru Nakayama, Atsugi, JP;
Ken Yamaguchi, Atsugi, JP;
Kazuhiko Muto, Kawasaki, JP;
Yasuteru Ichida, Machida, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
Disclosed is a photo sensor in which a photoelectric converter having a P-N junction and an amplifying section having a bipolar transistor to amplify an output of this converter are integrally formed in a semiconductor substrate. The input stage of the amplifying section has an insulating gate type transistor, and the output of the photoelectric converter is inputted to the gate electrode of this transistor. The photosensing surface of the photoelectric converter is covered by a transparent ptotection film, and a thickness of this film is determined so as to make the reflection factor of the incident light at the photo sensing surface of the photoelectirc converter zero. In manufacturing of this photo sensor, the base region of the bipolar transistor and one region of the P-N junction of the photoelectric converter of the same conductivity type as the base region are simultaneously formed.