The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 07, 1993
Filed:
Apr. 30, 1992
Applicant:
Inventors:
Kyojiro Kaneko, Osaka, JP;
Hideyuki Mizumoto, Oaza-kamimabushi, JP;
Assignee:
Sumitomo Sitix Co., Ltd., Hyogo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C30B / ;
U.S. Cl.
CPC ...
1566171 ; 1566181 ; 1566204 ; 156D / ; 156D / ; 156D / ;
Abstract
A single crystal silicon is prepared by constructing a silicon melt reservoir of an induction coil coated on its internal surface with a layer of a high melting point insulating material and placing silicon raw material in the reservoir, heating the silicon raw material by application of an external heating means and by current applied to the induction coil which electromagnetically heats the silicon thereby forming a pool of molten silicon in the reservoir, actively cooling said induction coil, and drawing up a single crystal silicon rod from the molten silicon in the melt reservoir.