The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 23, 1993
Filed:
Jun. 19, 1992
Adi Srinivasan, Fremont, CA (US);
Ta-Pen Guo, Cupertino, CA (US);
Aptix Corporation, San Jose, CA (US);
Abstract
A pullup circuit for use with plurality of N-Channel pulldown transistors connected to a bit line includes a P-channel MOS pullup transistor connected between the bit line and a voltage rail. An inverter is connected between the bit line and the drain of an N-Channel MOS transistor having its gate connected to the voltage rail and its source connected to the gate of the P-Channel MOS pullup transistor. A first P-Channel MOS transistor is connected between the voltage rail and the gate of the P-Channel MOS pullup transistor. A second P-Channel MOS transistor having its gate connected to ground is connected between the bit line and the gate of the first P-Channel MOS transistor. Four P-Channel MOS divider transistors are connected between the drain of the first P-Channel MOS transistor and ground. The gates of the P-Channel MOS divider transistors are connected together to ground. The P-Channel MOS pullup transistor and the N-Channel MOS pulldown transistors are large. The first and second P-Channel MOS transistors, the first N-Channel MOS transistor, and the P-Channel MOS divider transistors are close to minimum size. The P-Channel and N-Channel devices comprising the inverter devices are larger than minimum size.