The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 23, 1993
Filed:
May. 04, 1992
Hiroshi Muto, Kariya, JP;
Masami Yamaoka, Anjo, JP;
Nippondenso Co., Ltd., Kariya, JP;
Abstract
A high withstanding voltage transistor is provided with a substrate with its main surface at least part of which is electrically insulated, and a plurality of MOS type field effect transistors of the same channel type that are formed on the insulated main surface of the substrate, the channel regions of the number of MOS type field effect transistors are electrically separated respectively, the gates of the plurality of MOS type field effect transistors are mutually connected electrically, between and among the plurality of MOS type field effect transistors, the source of one transistor is connected to the drain of another transistor, and connecting in series the plurality of MOS type field effect transistors, they are made into a single transistor, thereby dividing the voltage applied in between the drain and the source of this high withstanding voltage transistor with depletion layer of the respective transistors and in turn improving the withstanding voltage of the whole.