The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 23, 1993

Filed:

Feb. 28, 1992
Applicant:
Inventor:

Lap K Cheng, Bear, DE (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C30B / ;
U.S. Cl.
CPC ...
1566 / ; 156621 ; 156622 ; 156624 ; 156D / ; 156D / ;
Abstract

A hydrothermal process is disclosed for growing a crystal at MTiOXO.sub.4 wherein M is NH.sub.4, K, Rb and/or Tl or mixtures thereof with Cs and X is P and/or As, at elevated temperatures using a mineralizer comprising both M.sup.+1 and X.sup.+5 and an amount of F.sup.- effective to increase the solubility of MTiOXO.sub.4 in the mineralizer. Mineralizers containing F.sup.-1, M.sup.+1 and X.sup.+5 are disclosed wherein F.sup.-1 is present in an amount effective to increase the solubility of MTiOXO.sub.4 in the mineralizer and to provide a MTiOXO.sub.4 solubility of at least about 1% by weight at the operating temperature and pressure for the hydrothermal production.


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