The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 16, 1993
Filed:
Sep. 16, 1991
Applicant:
Inventors:
Young-Taek Lee, Seoul, KR;
Jin-Man Han, Chuncheon, KR;
Kyoung-Ho Kim, Suwon, KR;
Hong-Seon Hwang, Suwon, KR;
Assignee:
SamSung Electronics Co., Ltd., Suwon, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C / ;
U.S. Cl.
CPC ...
36518901 ; 365159 ; 331 64 ;
Abstract
A back-bias level sensor used for a semiconductor device wherein a sensing current for sensing a back-bias voltage is prevented from directly flowing into the substrate (or the back-bias voltage terminal). The gate of a PMOS transistor is provided with the back-bias voltage while the source is provided with a ground voltage, so that a pump circuit performs the pumping operation to increase the back-bias voltage when the back-bias voltage is lower than a predetermined voltage level; otherwise, the pump circuit is de-energized, thereby reducing the back-bias voltage.