The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 16, 1993
Filed:
May. 14, 1992
Kiyofumi Ochii, Yokohama, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A dynamic memory cell includes a first MOS transistor for data transfer connected at one end to a read/write node and having a gate connected to a transfer gate control line, a second MOS transistor having a gate connected to a first storage node on the other end side of the first MOS transistor and a gate capacitor used as a data storage capacitor, a third MOS transistor for refresh current supply connected at one end to the first storage node, and a resistor element or switching element connected between the gate of the third MOS transistor and the other end of the second MOS transistor. The cell itself has the refresh current supplying capability and it is not necessary to effect the refresh operation on the read/write node side by turning on the charge transfer transistor.