The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 16, 1993
Filed:
Oct. 24, 1991
Stephen J Glica, Somerset, NJ (US);
Raymond L Giordano, Flemington, NJ (US);
Harris Corporation, Melbourne, FL (US);
Abstract
A first IGFET and a first bipolar transistor are connected in series between a first power terminaland a first load terminal. A second IGFET and a second bipolar transistor are connected in series between a second load terminal and a second power terminal. the first and second IGFETs are biased to pass the same load current. The first and second bipolar transistors are selectively turned on at the same time to permit current flow via a load which may be connected between the first and second terminals. When the first and second bipolar transistors are turned-off, they prevent conduction (except for leakage) between the load terminals and the first and second power terminals, if and when the voltage at the load terminal goes positive and/or negative. The circuit also includes means for compensating for the base current of the first and second bipolar transistors.