The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 09, 1993
Filed:
Aug. 21, 1991
Daniel J Dooley, Saratoga, CA (US);
Arthur R Elsea, Jr, Freemont, CA (US);
Lasa Industries, Inc., San Jose, CA (US);
Abstract
An improved method of patterning layers on a semiconductor element by use of laser processing. A thin film of amorphous silicon is deposited on a fused quartz window. Selected regions of the amorphous silicon are crystallized by a laser beam focused through the quartz window. The non-crystallized silicon is removed forming an opaque layer of crystallized silicon in the desired pattern. The quartz window is used as a window to a reactive gas containment chamber containing semiconductor devices to be patterned. By irradiating the chamber with ultraviolet light through the patterned quartz window, the semiconductor element is etched in the regions exposed to the light.