The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 09, 1993
Filed:
Jun. 12, 1991
Applicant:
Inventors:
Shahzad Akbar, Poughkeepsie, NY (US);
Jack O Chu, Astoria, NY (US);
Brian Cunningham, Highland, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
C30B / ;
U.S. Cl.
CPC ...
156610 ; 456613 ; 456614 ; 456D / ; 437126 ; 437131 ;
Abstract
A method of depositing Ge on a Si substrate in a reaction chamber includes the steps of: precleaning the substrate; evacuating the chamber to a pressure below 10.sup.-9 Torr; heating the substrate to 300-375 degrees C; and providing a 10% GeH4, 90% He mixture of gas with a GeH.sub.4 partial pressure of 1-5 mTorr.
Akbar, Shahzad. (1993). Heteroepitaxial growth of germanium on silicon by uhv/cvd (U.S. Patent No. 5259918). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5259918
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile