The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 09, 1993
Filed:
Jul. 28, 1992
Applicant:
Inventor:
Melvin C Ohmer, Dayton, OH (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C30B / ;
U.S. Cl.
CPC ...
156605 ; 156603 ; 15662072 ; 148D / ; 437 17 ;
Abstract
A method for producing a semiconductor crystal which is highly transparent in the 1-3 .mu. spectral range is described which comprises the steps of exposing the crystal to high energy ionizing gamma radiation to produce within the crystal energetic photo electrons which produces defect donors to cancel acceptors existing in the as-grown crystal.
Ohmer, Melvin. (1993). Transparent semiconductor crystals (U.S. Patent No. 5259917). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5259917
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile