The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 1993
Filed:
Feb. 03, 1992
Gary W Hoshizaki, Mesa, AZ (US);
Robert N Dotson, Chandler, AZ (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
A memory cell sense technique for sensing a logic state of a memory cell. An output level translator (33) which can be preset to a predetermined logic state is utilized. A current source circuit (24) and a current sink circuit (26) change memory cell sensing into two distinct modes. In the first mode, the memory cell logic state is identical to the preset output logic state. The memory cell generates a differential voltage which is countered by a differential voltage created by the current source and current sink circuit. Inputs to a sensing circuit common mode and non-complemented output (44) remains in the preset logic state. In the second mode, the current source circuit and current sink circuit aid the memory cell in generating a differential voltage. The sensing circuit senses the differential voltage and changes the non-complemented output (44) from the preset logic state.