The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 1993
Filed:
Dec. 07, 1990
Applicant:
Inventor:
Laurent Sourgen, Aix en Provence, FR;
Assignee:
SGS-Thomson Microelectronics, S.A., Gentilly, FR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C / ; G11C / ;
U.S. Cl.
CPC ...
365 96 ; 365182 ; 365218 ; 3652257 ;
Abstract
A MOS fuse with programmable tunnel oxide breakdown is made up of a tunnel oxide EEPROM cell, which can be programmed/erased by a programming/erasure voltage having a slow-rising edge, while the tunnel oxide can be subjected to breakdown, when desired, by switching over to a programming/erasure voltage having a steep edge. Such fuse can be used in all MOS integrated circuits and particularly in memory card type applications.