The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 1993
Filed:
Dec. 29, 1992
Kalluri R Sarma, Mesa, AZ (US);
Charles S Chanley, Scottsdale, AZ (US);
Honeywell Inc., Minneapolis, MN (US);
Abstract
A method for fabricating single crystal islands on a high temperature substrate, thereby allowing for the use of high temperature processes to further make devices incorporating the islands such as, for example, high mobility thin film transistor integrated drivers for active matrix displays. The method essentially includes depositing an etch stop layer on a single crystal silicon substrate, depositing a single crystal silicon device layer on the etch stop layer, bonding a quartz substrate to the single crystal silicon device layer at room temperature, sealing and securing with an adhesive the edges of the single crystal silicon substrate, the etch stop layer, the single crystal silicon device layer and the quartz substrate, grinding away a portion of the silicon substrate and a portion of the adhesive, etching away the remaining portion of the silicon substrate, removing the remaining portion of the adhesive, etching away the etch stop layer, applying a photoresist mask on the single crystal silicon device layer for defining the islands on the single crystal silicon device layer, etching single crystal silicon islands, and then the first non-room-temperature process of diffusion bonding the single crystal silicon islands to the quartz substrate.