The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 26, 1993
Filed:
Oct. 02, 1992
Masaaki Iwai, Yokohama, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
For making an isolation region on a semiconductor substrate without forming an unwanted bird beak, after forming an insulating film on the semiconductor substrate, the substate surface is covered with a resist mask. An LPD SiO.sub.2 film is deposited on the unmasked portion of the substrate surface, using a hydrofluoric acid solution containing silicon dioxide so as to be supersaturated. Thereafter, the mask is removed from the substrate surface. Further, after a groove is formed in the semiconductor substrate, it may be filled with the LPD SiO.sub.2 film to provide the isolation region in the substrate.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile