The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 26, 1993

Filed:

May. 08, 1992
Applicant:
Inventor:

Hiroki Hozumi, Kagoshima, JP;

Assignee:

Sony Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 60 ; 437 32 ; 437 33 ; 437 69 ;
Abstract

A semiconductor device fabricating method removes bird's head formed in the edges of a SiO.sub.2 film formed by a recessed LOCOS process in fabricating a semiconductor device. The semiconductor device fabricating method comprises steps of forming device isolating regions (6) on a silicon substrate (1) by a recessed LOCOS process, forming an insulating film (10) over the entire surface of the work, and simultaneously forming contacts of a polycrystalline silicon film (15) between the device isolating regions (6) and resistors of the polycrystalline silicon film (15) over the device isolating regions (6). Portions of the polycrystalline silicon film (15) corresponding to the bird's heads in the edges of the insulating film (10) are removed selectively, and exposed portions of the insulating film (10) and the bird's heads in the device isolating regions (6) are removed sequentially by etching to flatten the surface of the work.


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