The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 26, 1993
Filed:
May. 30, 1991
Dong-Joo Bae, Seoul, KR;
SamSung Electronics Co., Ltd., Suwan, KR;
Abstract
Disclosed is a method for fabricating a MOS transistor of the GOLD structure that allows self-aligning contact process and more precise control of low-concentration diffusion regions. The method characteristically includes the steps of: forming an oxide layer(55) over the conductive electrode(53a,54a,58a), the thickness of the oxide layer being sufficiently greater than the gate oxide layer, and depositing an insulating interlayer(61) over the semiconductor substrate after forming source and drain regions, the insulating interlayer being directionally etched through a photoresist pattern, so as to form a contact hole having a width extended up to a partial portion of the conductive electrode. The effective channel widths of the low-concentration diffusion regions may be precisely controlled only by adjusting the thickness of polysilicon (or refractory metal or silicide thereof) layer selectively deposited on the side walls of the conductive electrode.