The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 26, 1993
Filed:
May. 22, 1992
Joel Hartmann, Claix, FR;
Abstract
Method for producing a non-volatile memory cell and obtained memory cell. This method consists of embodying strips in a stacking of one nonconducting film and one conductive film, both films intended to respectively form the gate nonconductors (210) and the floating gates (208) of transistors, of forming spacers (230) on the flanks of the strips of said stacking, of eliminating the spacers on the side of the drains of the memory points to be embodied, of implanting ions of a type with conductivity differing from that of the substrate by using the remaining spacers and the strips of said stacking as a mask so as to form the sources and drains (214, 216) of the transistors, respectively offset and aligned with respect to said strips, of eliminating the remaining spacers, of forming a thin electric nonconducting film (208) on the sources and drains of the transistors, of embodying conductive strips (206a) perpendicular to the diffused source and drain zones, and of etching the strips of said stacking by using the conductive strips as a mask.