The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 26, 1993
Filed:
Feb. 14, 1992
Applicant:
Inventors:
Subhendu Guha, Troy, MI (US);
Chi C Yang, Troy, MI (US);
Arindam Banerjee, Madison Heights, MI (US);
Assignee:
United Solar Systems Corporation, Troy, MI (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
437-4 ; 437101 ; 136258 ; 257458 ; 427 74 ; 427575 ; 427578 ;
Abstract
A method for manufacturing thin film, photovoltaic devices of the type having an intrinsic semiconductor layer disposed between two oppositely charged doped, semiconductor layers. A buffer layer of intrinsic semiconductor material is RF deposited at the junction between a microwave deposited, base intrinsic layer and a layer of doped material. The cell produced by the method of the present invention has enhanced performance characteristics over cells having microwave deposited intrinsic layers with no barrier layers.