The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 26, 1993
Filed:
Feb. 28, 1992
Koji Tada, Osaka, JP;
Masami Tatsumi, Osaka, JP;
Sumitomo Electric Industries, Ltd., Osaka, JP;
Abstract
An apparatus for growing single crystals of III-V compound semiconductors of the vapor pressure control type using a vertical puller characterized by dividing the surface area of a melt into two sections, covering one section with a liquid encapsulant while maintaining the other section in contact with the atmosphere of the vessel (furnace). The apparatus comprises a sealable vessel, an upper shaft, a lower shaft, a plurality of heaters, a crucible and a means for dividing the surface of the melt contained in the crucible. As a result, single crystals of III-V compound semiconductors having various excellent properties such as low impurity content (high purity), low dislocation density and the like maybe obtained.