Static random access memory having memory cells with electric field

Abstract

A static random access memory integrated circuit comprises a plurality of memory cells that contain load resistance elements formed as load resistance strips in proximity of active and passive components of the integrated circuit. A conductive layer formed between the load resistance strips and such components functions as a shield to protect the load resistance strips of a memory cell from the effects of electric fields established from operation of such components, such as, MOS transistors underlying the load resistance strips between which the shield is formed. With the load resistance strips protected by the presence of the shield, their resistance values will not vary or be effected by imposing electric fields from the operation of the MOS transistors. Shield protection of the load resistance values by this shielding permits a corresponding thinning of thickness of the load resistance strips to increase their resistance value thereby permitting a reduction in the length of these strips while maintaining their necessary high resistance values for operation of the memory cell, which reduces the consumption current, I.sub.DD, as well as the overall size of the memory cell so that the total density of the static memory device is effectively increased.