The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 1993
Filed:
Sep. 17, 1991
Mizuki Segawa, Osaka, JP;
Shuichi Kameyama, Hyogo, JP;
Hiroshi Shimomura, Osaka, JP;
Atsushi Hori, Osaka, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
There is disclosed a method for manufacturing a bipolar semiconductor device in which emitter region and active base region are formed by implanting impurities of first and second conduction types in a first semiconductor region of the first conduction type to be a collector through a non-single crystalline semiconductor thin film, a second semiconductor thin film is formed on the first semiconductor thin film, and an impurity of the first conduction type is introduced in the second semiconductor thin film after patterning the first and second semiconductor thin film so as to form an emitter electrode.