Lateral mim device and method of production

Abstract

A lateral MIM structure for use in liquid crystal and other optical display devices and method of manufacture, which eliminates deviations in element operating characteristics, especially for pixel electrodes, by utilizing top edges of the input signal conductor as active MIM element areas in combination with side conductor surfaces. The lateral MIM structure is made by electrically contouring insulation formed on a first conductor to have a lower resistance where it covers at least one side surface and top edge to allow MIM electrical interactions and than where it covers the remaining top surface so as to substantially prevent electrical interactions over this surface. A second conductor is then deposited on the insulation layer. This is accomplished by forming one insulation material on the top of the input conductor using a positive photoresist and etch-back procedure, followed by forming a second insulation layer over the first and the conductor side surfaces and top edges. Alternatively, the first insulation material is etched using a negative photoresist and etch-back, followed by forming the second insulation material only on top of the first conductor.