Tfel edge emitter structure with light emitting face at angle greater

Abstract

A TFEL edge emitter structure has a bottom substrate layer, a lower common electrode layer applied over the bottom substrate layer an upper control electrode layer, and a middle EL light-energy generating stack disposed between the lower common electrode and the upper control electrode layers. The middle EL stack includes a lower dielectric layer, an upper dielectric layer, and a middle light-energy generating layer. The lower dielectric layer overlies the lower common electrode layer and bottom substrate layer. The middle light-energy generating layer is deposited over the lower dielectric layer. The upper dielectric layer is deposited over the middle light-energy generating layer. A light emitting face on a front edge of the EL stack is disposed at an angle relative to a street on the front edge portion of the substrate layer that is greater than ninety degrees. The angle selected should be sufficiently greater than ninety degrees relative to the substrate layer street so that a divergent zone of light emitted by the face is not obstructed by the street. A focussing lens is located at a position spaced in front of the inclined light emitting face of the TFEL edge emitter structure where the lens will intercept and intensify a zone of light emerging from the inclined face. A central axis of the focussing lens extends perpendicular to the respective light emitting face.